punch-through voltage
英 [pʌntʃ θruː ˈvəʊltɪdʒ]
美 [pʌntʃ θruː ˈvoʊltɪdʒ]
网络 击穿电压; 贯穿电压; 穿通电压
双语例句
- A novel IFO technology is proposed for high side thick gate oxide device to avoid punch-through breakdown induced by thin layer SOI back-gate effect. The technology includes a criterion of the punch-through breakdown and an implantation process for precise control of the punch-through breakdown voltage.
提出一种场氧离子注入IFO技术。该技术包含一个穿通击穿电压判据和一项注入工艺设计,可精确控制薄膜SOI背栅效应导致的高端厚栅氧器件的穿通击穿电压。 - When the bias voltage was greater than the punch-through voltage, we found that the detector capacitance decreases with the increasing frequency, and increases with the increasing temperature.
当探测器两端的偏置电压大于穿通电压时,发现探测器的电容随着频率的增大而减小,随测试温度的升高而增大。 - Improving Source-Drain Punch-Through Voltage in 2-μ m p-Well CMOS Process
2μmp阱CMOS工艺中提高源-漏穿通电压的方法
